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FE Electrical and Computer Properties of Electrical Materials Practice Problems

The current FE Electrical and Computer specification assigns 4-6 of the 110 exam questions to Properties of Electrical Materials. Form A contains 4 original problems in this area. The sample below is published in full, with the same worked-solution format used throughout the book.

Free sample problem

Silicon at 300 K is doped with donors at and acceptors at . The intrinsic carrier concentration of silicon at this temperature is . The equilibrium hole concentration is most nearly:

  1. (A)
  2. (B)
  3. (C)
  4. (D)
Show worked solution

Answer: (A)

Compensation leaves a net donor density of , and the mass-action law puts the equilibrium hole concentration at about .

Compensated material carries a majority density equal to the net dopant excess, since each acceptor consumes one donor electron.

Mass action then fixes the minority population, which in heavily doped silicon sits many orders below the intrinsic level.

FE Reference Handbook — Properties of Electrical Materials: Intrinsic and Extrinsic Carrier Concentration (Mass Action Law)

Why the other choices appear

  • (B)Takes the acceptor concentration as the majority density: .
  • (C)Adds the acceptor density to the donor density instead of subtracting: .
  • (D)Ignores compensation and divides by the donor density alone: .

The complete Form A contains 4 problems in this area and 110 problems overall, with an answer key and full solutions.